http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2981940-A1

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publicationDate 2013-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber FR-2981940-A1
titleOfInvention PROCESS FOR DIRECTLY BONDING A SILICON OXIDE LAYER
abstract Direct bonding process between at least a first layer (104) composed of silicon oxide and a second layer (108) of material having a hydrophilic character, comprising at least the steps of: - producing the first layer on a first substrate (102) such that the absorbance value of this first layer at a vibrational frequency of silanol bonds present in the first layer is equal to or greater than about 1.5 nm; direct bonding between the first layer and the second layer (108).
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Total number of triples: 31.