http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2972565-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99505f5f312672820e9f78c254c00a4d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80001 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1461 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80896 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-9202 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00095 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2011-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a89cd084ff9298d42b7f32d1a919166 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23542420af84b6bcb6f6acd561b09b22 |
| publicationDate | 2012-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | FR-2972565-A1 |
| titleOfInvention | PROCESS FOR PRODUCING VERTICAL INTERCONNECTS THROUGH LAYERS |
| abstract | The invention relates to a method for producing at least one interconnection well intended to allow the realization of a conductive via between at least two connection layers of a component comprising a stack of at least a first and a second substrate electrically isolated from each other, the method comprising defining at least one surface contact area of a surface connection layer on a surface of the stack and at least one first contact area (41 buried in the stack from a first buried connection layer (4) of the first substrate, characterized in that at least one material-free zone (51, 61) is disposed between the first (1) and the second (2) substrates and in that it comprises a step of producing from said surface (2 ', 3') the stack of at least one first interconnection well (82) passing through at least the second substrate (2) extending between the contact zone of the surface (82 ", 85") and the first buried contact zone (41) and passing through the material-free zone (51, 61), as well as a first layer (5) covering the first buried connection layer ( 4). |
| priorityDate | 2011-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.