http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2956669-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99505f5f312672820e9f78c254c00a4d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-623 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-191 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B7-00 |
| filingDate | 2010-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4afd7585e0e87acd0fb0dd9db5184448 |
| publicationDate | 2011-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | FR-2956669-A1 |
| titleOfInvention | METHOD FOR CRYSTALLIZING MATERIALS |
| abstract | The present invention relates to a method useful for forming a crystalline deposit of a material on at least one surface area of at least one side of a substrate, comprising at least the steps of: i. determining, on said face, the surface on which said crystal deposit, said area of interest, is to be formed, ii. generating, on said face, at least one defect, said defect being located outside said area of interest, iii. depositing on said zone of interest at least one continuous film of a solvent medium comprising at least said material to be crystallized, said film coming at least in contact with said defect so as to initiate localized germination and / or growth of said material in the vicinity immediate from this defect, and iv. expose the set to favorable conditions for the growth of a corresponding crystal on the area of interest. |
| priorityDate | 2010-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.