http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2923083-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_37f4922dfb7777b019e504b885211b8e http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99505f5f312672820e9f78c254c00a4d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-622 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-615 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-472 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B11-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-191 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-54 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 |
| filingDate | 2007-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cd75f8114912a35c30d668e0dea3c25 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0d05d22adecb367ffc03441a235ad83 |
| publicationDate | 2009-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | FR-2923083-A1 |
| titleOfInvention | REALIZATION OF A THIN LAYER IN MOLECULAR ORGANIC SEMICONDUCTOR MATERIAL |
| abstract | The invention relates to a method for producing a thin layer of molecular organic semiconductor material (MSCO) intended to be integrated in a device for applications in electronics, optics or optoelectronics, comprising the following steps: (c) providing a a determined amount of the molecular MSCO in the form of a melt on the surface of a support so as to form a thin layer; (d) cooling according to a determined temperature profile to cause solidification of the thin layer; characterized in that the the surface temperature of the support is greater than or equal to the melting point of the molecular MSCO at the time of carrying out step (a), and in that the temperature profile of step (b) comprises: - a first part corresponding to controlled and slow cooling of the molecular MSCO to a temperature close to the crystallization temperature of the molecular MSCO to appear as a single seed in the thin layer in molten form; and a second part corresponding to a controlled cooling so that at least one monocrystalline domain increases from this seed, the thin film finally obtained being monocrystalline. The invention furthermore relates to a method for producing a field effect transistor. organic. |
| priorityDate | 2007-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 85.