http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2916856-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99505f5f312672820e9f78c254c00a4d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49004 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-34 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R27-00 |
| filingDate | 2007-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ed3e91a5f10e40a859519073b4e1627 |
| publicationDate | 2008-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | FR-2916856-A1 |
| titleOfInvention | METAL / SEMICONDUCTOR RESISTIVITY MEASURING DEVICE |
| abstract | The invention relates to a device (100) for measuring resistivity rhoc of an interface between a semiconductor (104) and a metal (119), comprising at least: - a dielectric layer (102), - at least one element (104), based on the semiconductor, disposed on the dielectric layer, of substantially rectangular shape, having a face of length L and width W in contact with the dielectric layer and having a thickness t, - at least two portions of interface (119) based on the metal or an alloy of said semiconductor and said metal, each of two opposite faces of the semiconductor element, of area equal to tx W and perpendicular to the face in contact with the dielectric layer, being completely covered by one of the interface portions. |
| priorityDate | 2007-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.