| abstract |
The invention relates to a method for manufacturing a substrate, especially for an integrated circuit, from a silicon substrate, comprising the following steps: (1) - a layer is created on the silicon substrate (1); of insulating oxide, the oxide is removed in certain zones of the substrate, characterized in that it further comprises the step of depositing a semiconductor layer (2) by semiconductor sputtering in a gas plasma, the atom deposition rate being lower than the rate of homogenization of these atoms together. The invention also relates to a substrate. |