http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2916092-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9cbbaf2c3314ee557a571acf8872ab83 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1228 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 |
| filingDate | 2007-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53110e32cef1abd6625edeccee1dd916 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5260ab4d2f9f4254bd2e59d2c8ec57af |
| publicationDate | 2008-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | FR-2916092-A1 |
| titleOfInvention | SEMICONDUCTOR LASER WITH STRONG REPEAT COUNTER-REACTION |
| abstract | The present invention relates to a strong distributed feedback semiconductor laser. More precisely, the invention uses an upper optical guide (2) for a semiconductor laser having a surface metal grating (5) making it possible to obtain a stable and controlled distributed feedback according to a simple and robust technology. In the laser according to the invention, which comprises an active zone (1) having an effective refractive index (neff) in which a light wave having a wavelength (λ) is propagated, the upper guide (2) consists of of a lightly doped material and the periodic grating (5) has slots whose depth (p) is more or less fifty percent, the low precision required being one of the advantages of the laser according to the invention. |
| priorityDate | 2007-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419521669 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID91307 |
Total number of triples: 14.