| abstract |
The subject of the invention is a process for treating at least one continuous thin film deposited on a first face of a substrate, characterized in that said at least one thin layer is brought to a temperature of at least 300 C degrees by maintaining a temperature less than or equal to 150 degrees C at the face of said substrate opposite to said first face, so as to increase the crystallization rate of said thin layer by maintaining continuous and without melting step of said layer The invention also relates to the material that can be obtained by this method. |