http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2910176-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99505f5f312672820e9f78c254c00a4d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82B3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 2006-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cf841f68db679b6748710dbfb4f0a03 |
| publicationDate | 2008-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | FR-2910176-A1 |
| titleOfInvention | METHOD FOR PRODUCING A DEVICE BASED ON NANOCRYSTALS COATED WITH A CVD-BASED NITRIDE LAYER |
| abstract | The invention relates to a method for producing a structure comprising nanocrystals of semiconductor material on a substrate of dielectric material by chemical vapor deposition (CVD), the nanocrystals being covered with a nitride layer. The method comprises a step of forming stable seeds on the substrate by CVD deposition from a first seed precursor gas; a step of growing nanocrystals from stable seeds by CVD deposition from a second precursor gas; a step of forming a nitride layer of semiconductor material on the nanocrystals. The method is characterized in that the passivation step is performed by selective CVD deposition of semiconductor material nitride only on the nanocrystals from a mixture of the second and third precursor gases chosen to generate selective deposition. nitride only on said nanocrystals, the steps of formation of nuclei, formation of nanocrystals and passivation being performed within a single enclosure.The invention also relates to the formation of memory cells and flash memories comprising nanocrystals performed according to the method of the invention. |
| priorityDate | 2006-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.