http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2893762-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99505f5f312672820e9f78c254c00a4d
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
filingDate 2005-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ed3e91a5f10e40a859519073b4e1627
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9bde17bef87008c2635a992a5a87e7b
publicationDate 2007-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber FR-2893762-A1
titleOfInvention METHOD FOR MAKING SELF-ALIGNED DOUBLE GRID TRANSISTOR BY REDUCING GRID PATTERN
abstract The present invention relates to an improved microelectronic method for producing a double-gate structure for a transistor, and in particular grid patterns (108a, 128a, 208a, 228a, 308a, 328a) having a critical dimension smaller than the dimension critical of the channel region (104b) of the transistor. This method comprises in particular a step of reduction by isotropic etching of the patterns of the double gate. The invention also relates to a microelectronic device obtained using such a method.
priorityDate 2005-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID15913
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449266279

Total number of triples: 21.