| abstract |
The present invention relates to a method for reducing the roughness of a thick insulating layer (2) deposited on a substrate (1) intended for use in the fields of electronics, optoelectronics or optics. The method is remarkable in that it comprises the following steps consisting in: - depositing an insulating layer (2), the roughness of which is greater than or equal to 3 angstroms RMS, on said substrate (1), - carrying out a treatment for smoothing the free surface (20) of this insulating layer (2), using a gaseous plasma, formed in an enclosure inside which there is a gas pressure greater than 0.25 Pa, this plasma being created with the aid of an RF radiofrequency generator, which operates with such a power, that it makes it possible to apply to said layer of insulation (2), a power density greater than 0.6 W / cm < 2>, the duration of this smoothing treatment being at least 10 seconds. The invention also relates to a layer transfer process s on the surface of the insulation thus treated. |