http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2886457-A1

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
filingDate 2005-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d74bed1b6b907515cc5c15c18c203a9a
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publicationDate 2006-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber FR-2886457-A1
titleOfInvention METHOD FOR MANUFACTURING THICKENED OXIDE LAYER STRUCTURE, ESPECIALLY ON GE OR SIG SUBSTRATE
abstract The present invention relates to a method for forming a structure (50) made from semiconductor materials and comprising a substrate layer (10) and an insulating layer (40), the method comprising a step of creating said insulating layer ( 40) involving the formation of an oxidizable layer on the substrate layer and the oxidation of said oxidizable layer, characterized in that said step of creating insulating layer comprises: (a) forming a thin layer of elementary insulation (20) on the substrate layer so as to have a final thickness not exceeding 20 nm on average, (b) forming an oxidizable layer (30 ') covering said thin layer of elementary insulation (c) a thermal oxidation of said oxidizable layer (30 '), so that the joining of the layers thus formed in steps (a) and (c) constitutes said insulating layer (40) of the structure (50), said insulating layer (40) of the tructure (50) having a desired thickness.
priorityDate 2005-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 30.