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filingDate 2004-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b9fff6183e59cea4ecc52bb00887295e
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publicationDate 2005-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber FR-2860918-A1
titleOfInvention METHOD FOR MANUFACTURING THIN FILM TRANSISTOR MATRIX SUBSTRATE
abstract A method of manufacturing a thin film transistor capable of simplifying a substrate structure and a manufacturing method are described. The method of manufacturing a thin-film transistor array substrate comprises a three-step masking process, which comprises: forming a gate pattern on a substrate; forming a gate insulating film on the substrate having the gate pattern thereon; forming a source / drain pattern and a semiconductor pattern; forming a passivation film to protect the thin film transistor over the entire surface of the substrate; forming a pattern of photosensitive resin on the passivation film; molding the passivation film using the photosensitive resin pattern to form a passivation film pattern; and forming a transparent electrode pattern extending from a side surface of the passivation film pattern and formed in an area excluding the passivation film pattern.
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