| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8292741de96a44319670508be1f78f1a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate |
2003-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59800bf437a0d1bc0b2d34fe192ade9c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bca98b49f0e1ccdd58114f9d8501d75d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c12ca620508cad487a7bde8942f2ef0 |
| publicationDate |
2004-07-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
FR-2850205-A1 |
| titleOfInvention |
METHOD FOR MANUFACTURING A FLASH MEMORY AND FLASH MEMORY THUS MANUFACTURED |
| abstract |
The invention relates to a method for manufacturing a flash memory (1) from a semiconductor substrate (2) provided with at least two adjacent rows (31, 32) of precursor stacks of floating gate transistors, the stacks (31, 32) being at least partially covered with a protective resin (14) and being separated by a zone for forming a source line (71), the method comprising the steps consisting in: - forming a trench in the zone of formation of the source line (71) by an attack on this zone and on the protective resin (14), which results in a deposit of residues (15) of the resin below the stacks; subsequently remove the residue deposit (15); - subsequently install a source line (7) in the formation zone below the stacks. This process makes it possible to reduce the time for erasing the memory. on a Flash memory. |
| priorityDate |
2003-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |