| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_37f4922dfb7777b019e504b885211b8e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_066157a673a15044d19b7f38a75cc2a8 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S427-106 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-274 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-27 |
| filingDate |
2003-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f3fc608a9aad6e4e0e40ddccc3e894a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5fefb70976a56b9b74dbcf3b70844d78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_885f75532b26ba4dee9dc7d64eb0b98d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6fd357885fff3cbbf3b54bfa9821885d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2ee0225059baf83d47b7fa3970cc49c |
| publicationDate |
2004-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
FR-2849867-A1 |
| titleOfInvention |
DIAMOND GROWTH AT HIGH SPEED BY MICROWAVE PLASMA IN PULSE REGIME. |
| abstract |
Method of manufacturing a diamond film of electronic quality at high speed by pulsed microwave plasma in which, in a vacuum enclosure, a plasma of finite volume is formed, in the vicinity of a substrate by subjecting a gas comprising to the less hydrogen and carbon to a pulsed discharge, which presents a succession of low power states and high power states and having a peak absorbed power Pc, in order to obtain in the plasma at least radicals containing carbon and depositing said carbon-containing radicals on the substrate to form a diamond film there. A peak power density at least equal to 100 W / cm3 is injected into the plasma volume while bringing the substrate to a substrate temperature of between 700 ° C and 1000 ° C. |
| priorityDate |
2003-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |