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filingDate 2002-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b42b1d6bdffaa3494f5833d60c60919
publicationDate 2004-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber FR-2846146-A1
titleOfInvention METHOD AND INSTALLATION FOR DOPING A PATTERN OF SEVERE RESISTIVE ELEMENTS
abstract The invention relates to a method for selective doping of predetermined resistive elements of a usable electronic chip, which comprises three phases. The first phase consists in electrically and selectively charging certain elements (3) of the pattern. The second phase consists in adding dopants to the charged elements (3) according to their state of charge. The third phase consists of annealing in order to penetrate and activate the dopants.
priorityDate 2002-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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