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publicationDate 2002-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber FR-2816108-A1
titleOfInvention METHOD FOR THE SIMULTANEOUS MANUFACTURING OF A PAIR OF INSULATED GRID TRANSISTORS HAVING RESPECTIVELY A THIN OXIDE AND A THICK OXIDE, AND CORRESPONDING INTEGRATED CIRCUIT COMPRISING SUCH A PAIR OF TRANSISTORS
abstract The formation of the lightly doped NLDD zones 17, 61 of the second fine oxide transistor T2 comprises an implantation of a first doping agent 16 having a first concentration and an implantation of a second doping agent 22 having a second concentration lower than the first concentration. The formation of the lightly doped NLDD zones 61 of the first thick oxide transistor T1 comprises only said implantation of the second doping agent 22.
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