| abstract |
The invention relates to a method of making a copper connection with a copper connection element of an integrated circuit comprising a damascene structure, the connection element being successively covered with an encapsulation layer and minus a layer of very low dielectric constant dielectric material. The method comprises the following steps: - etching of said layer of dielectric material until it reaches the encapsulation layer, to obtain a connection hole, facing the connection element, - production of a protective layer on the wall of the connection hole, the protective layer preventing contamination of the dielectric material layer by copper diffusion, - etching of the encapsulation layer, at the bottom of the connection hole, so as to reveal the connection element, - filling the connection hole with copper. |