| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_040ec81c891acc3f3186f56cb99cf161 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S117-913 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66287
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
1998-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03da118960789ba68b26a7b9401cca7b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_193b4615b325dd3f4aebfe3f039721ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0179a8b5017731df396a8f43cfbda698 |
| publicationDate |
1999-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
FR-2774509-A1 |
| titleOfInvention |
METHOD FOR DEPOSITING A REGION OF MONOCRYSTALLINE SILICON |
| abstract |
The invention relates to a method for depositing a layer of silicon on a monocrystalline silicon substrate (11), so that this silicon layer is monocrystalline, but of orientation different from that of the substrate, comprising the steps consisting in delimiting a window on the substrate; creating interstitial defects (14) inside the window in an atomic proportion of less than one in a hundred; and depositing silicon (15 ′) under conditions generally corresponding to those of an epitaxial deposit, but at a temperature below 850 ° C. |
| priorityDate |
1998-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |