| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_99505f5f312672820e9f78c254c00a4d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E30-30 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G21C17-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N1-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G21C3-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G21C17-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N1-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N1-28 |
| filingDate |
1997-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc2365417dea92c4e05978fe9f1a1e8b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10f66efb4b8b0ba6d4e0e25a0ea57af7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c273244ff47f651d0006dff97cacdf0c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2dc7e5eb9abe2981b0af2b2a204c9d0a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11f2f550dbeac7bce073cd857fcc21fe |
| publicationDate |
1999-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
FR-2769983-A1 |
| titleOfInvention |
PROCESS FOR HEAT ATTACK IN OXIDIZING CONDITIONS OF A CERAMIC |
| abstract |
The invention relates to a method of thermal etching under oxidizing conditions of a ceramic with a view in particular to revealing its grain boundaries and studying its granular microstructure. particular to UO2 and to mixtures (U, Pu) O2. Said thermal attack is carried out in a furnace with a controlled atmosphere constituted by an oxidizing gas providing a chemical potential of oxygen of -75 kJ / mol to -125 kJ / mol, and comprises the following successive stages: - rapid rise in temperature of the furnace at a speed of 900degreC / h to 1500degreC / h from the initial temperature to a temperature plateau; - maintaining the temperature at said plateau at a value of 1250degreC to 1450degreC for a period of 30 minutes to 15 minutes. |
| priorityDate |
1997-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |