| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_37f4922dfb7777b019e504b885211b8e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02573 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 |
| filingDate |
1997-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6bc3cb532217dd7d52a0e45e053add78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27c94c01e51130897969e048584204cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6d9a19783837d83a877c39aaa6d7b46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9b1e44b039311a3a154481ddd4d235d9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61f806f7812850ed5f8b2d6e09f11347
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b90f2a961ad1680172b2a39eb6812c85 |
| publicationDate |
1999-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
FR-2769924-A1 |
| titleOfInvention |
PROCESS FOR MAKING AN EPITAXIAL LAYER OF GALLIUM NITRIDE, EPITAXIAL LAYER OF GALLIUM NITRIDE AND OPTOELECTRONIC COMPONENT EQUIPPED WITH SUCH A LAYER |
| abstract |
The present invention relates to a method for producing an epitaxial layer of gallium nitride (GaN) comprising the deposition on a substrate (1) of a thin layer of gallium nitride (2), characterized in that: - the a layer of dielectric (3) is deposited on said thin layer of gallium nitride, - the dielectric layer is etched so as to define point openings (4) and to expose the areas (5) of said thin layer of nitride of facing gallium, - the epitaxial and etched substrate is taken up under conditions of deposition, by epitaxy, of gallium nitride so as to induce the deposition of gallium nitride patterns on the facing areas and the anisotropic and lateral growth of said patterns ( 6). The invention also relates to the gallium nitride layers that can be obtained by the process. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6867112-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2302665-A1 |
| priorityDate |
1997-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |