http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2628985-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2109dd2d0172d9c7acb28d92eaa94590 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-10 |
| filingDate | 1988-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_540056c015f7c20a40c5ecb38087021f |
| publicationDate | 1989-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | FR-2628985-A1 |
| titleOfInvention | EPITAXY REACTOR WITH WALL PROTECTED AGAINST DEPOSITS |
| abstract | Epitaxy reactor for treating wafers 1 of semiconductor material by exposing them to a reactive gas stream. A wall 8 disposed a short distance from the wafer or group of platelets which is exposed to the reactive gas is a double wall, with a very thin space 34 between the two walls, and this space is filled with a mixture whose composition is adjustable and therefore the thermal conductivity can be adjusted. The mixture used is a mixture of hydrogen and argon, the proportion of each in the mixture being adjustable. The inner wall 8 of the double wall is a quartz plate and the outer wall 9 is made of metal. |
| priorityDate | 1988-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.