| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1374dd16777534b65ad4422333245af8 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03921
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-206
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32697
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32623 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-20 |
| filingDate |
1988-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a866a1bdc85a2b341ad4fb9ced8cdb86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b55308d748a15cb45f4eab4c02a782c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d99ba9be63f28f31622a417157a2ab96 |
| publicationDate |
1988-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
FR-2613535-A1 |
| titleOfInvention |
REACTOR FOR LAYING A LAYER ON A MOBILE SUBSTRATE FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE |
| abstract |
A SOLAR CELL HAVING A LAYERED STRUCTURE HAVING IMPROVED CHARACTERISTICS MAY BE MANUFACTURED BY A PLASMA ASSISTED CVD PROCESS WITH A HIGH DEPOSIT SPEED. SEPARATORS 11 PLACES BETWEEN DISCHARGE ELECTRODES 6, 7 ALLOWS TO CONTROL THE DISTRIBUTION OF THE COMPOSITION OF THE REACTION GAS CONTAINED IN THE REACTION CHAMBER 2 AND TO GIVE A COMPOSITION PROFILE DESIRED FOR THE LAYER IN THE DIRECTION OF ITS THICKNESS. A GRID ELECTRODE 23 IS INSERTED BETWEEN SUBSTRATE 17 AND A FIRST OF THE DISCHARGE ELECTRODES IN THE ONLY PART OF THE ENTRY THEREOF SO THAT A HIGH POWER CAN BE APPLIED TO THE DISCHARGE ELECTRODES AND THUS INCREASE THE DEPOSIT SPEED WITHOUT DAMAGING THE INTERFACE BETWEEN THE DEPOSITED LAYER AND AN UNDERLYING SUBSTRATE. AN ELECTRIC FIELD ADJUSTING MEANS 47 IN THE FORM OF A METAL WIRE FOR EXAMPLE IS PLACED IN THE OPENING OF A MASK USED BETWEEN THE SUBSTRATE AND ONE OF THE DISCHARGE ELECTRODES AND ALLOWS TO CONTROL THE QUALITY AND THICKNESS OF THE LAYER TO DEPOSIT. |
| priorityDate |
1987-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |