| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7be6f8dcbd9cafd0e70b3d9a8fa6ca44 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate |
1986-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f48942e778d048efca9d2135b50d5e0d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_596334269f7a20b450af7be57ac7b77e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7eec0b5cff30b217308fa5aa5594046c |
| publicationDate |
1988-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
FR-2603421-A1 |
| titleOfInvention |
PROCESS FOR LOCALIZED ENGRAVING OF A SILICON OXIDE LAYER |
| abstract |
THE PRESENT INVENTION CONCERNS A LOCAL ENGRAVING PROCESS OF A LAYER OF SILICON OXIDE SIO INCLUDING THE STEPS CONSISTING OF PLACING A SUBSTRATE CARRYING THE LAYER IN AN ENCLOSURE AT A PRESSURE LOWER BY APPROXIMATELY 10 PA IN THE PRESENCE OF SIH, AND PUNCTUALLY HEATING THE AREA TO BE ENGRAVED. THE HEATING IS PREFERREDLY CARRIED OUT BY MEANS OF A FOCUSED LASER BEAM. APPLICATION TO THE OPENING OF SILICON OXIDE LAYERS ON THE SURFACE OF SEMICONDUCTOR COMPONENTS DURING MANUFACTURING. |
| priorityDate |
1986-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |