http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2580670-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_37f4922dfb7777b019e504b885211b8e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0617 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0057 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-363 |
| filingDate | 1985-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1e789303cd58d57f4742eefbae53bd7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84d18d9f9be220da869b95465f1eb857 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5d2a7e6f8ac7881b0f5814d4427d437 |
| publicationDate | 1986-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | FR-2580670-A1 |
| titleOfInvention | PROCESS FOR DEPOSITING AT LEAST ONE LAYER OF A HOMOGENEOUS III-V OR II-VI COMPOUND, IN PARTICULAR GA AS AND SUBSTRATE COATED WITH SUCH DEPOSIT |
| abstract | THE INVENTION CONCERNS A PROCESS FOR DEPOSITING ON A SUBSTRATE OF AT LEAST ONE LAYER OF A HOMOGENEOUS COMPOUND, IN PARTICULAR BINARY, OF ELEMENTS OF FAMILIES III AND V OR II AND VI, IN PARTICULAR GA AND AS. SUBSTRATE 4 IS PROVIDED WITH REGARD TO A NEGATIVELY POLARIZED ELECTRODE 2 IN A VACUUM CHAMBER 1A IN WHICH THE TOTAL PRESSURE IS BETWEEN 10 AND 10 PASCALS. THE ELECTRODE IS COATED WITH ONE OF THE ELEMENTS OF THE COMPOUND TO BE DEPOSITED, ESPECIALLY PURE GALLIUM, AND A GAS MIXTURE COMPOSED OF NEUTRAL GAS AND AT LEAST ONE REACTIVE GAS CONTAINING THE OTHER ELEMENT IS ADMITTED IN THE VACUUM CHAMBER. COMPOUND IN PARTICULAR ARSENIC IN THE FORM OF ARSENIC HYDRIDE. THE PARTIAL PRESSURE OF THE REACTIVE GAS IS CHOSEN LOW COMPARED TO THE PARTIAL PRESSURE OF THE NEUTRAL GAS, THE RATIO OF THESE PRESSURES BEING BETWEEN 10 AND 3.10. |
| priorityDate | 1985-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.