| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c23a1323673a16fb6f1c1f6df4fe292b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-967
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-117
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-077
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-15 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26533
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26506 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
1983-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b2edbc461445677dd602e5299abb01a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_832b451a52dbd203533b13bbd72f1a12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ff991bebe58eb4925cc27e8e7bcf29f |
| publicationDate |
1984-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
FR-2542500-A1 |
| titleOfInvention |
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE OF THE TYPE COMPRISING AT LEAST ONE SILICON LAYER DEPOSITED ON AN INSULATING SUBSTRATE |
| abstract |
THE PROCESS ACCORDING TO THE PRESENT INVENTION INCLUDES A STEP OF DEPOSITING AT LEAST ONE LAYER OF INTRINSIC OR DOPE MONOCCRYSTALLINE SILICON 2 ON A SUBSTRATE 1 ALSO MONOCCRYSTALLINE FOLLOWED BY A STEP OF FORMATION OF A THIN LAYER OF SILICA 12 AT THE LEVEL OF THE ' SUBSTRATE-SILICON PRIMITIVE INTERFACE. THE FORMATION OF THE SILICA LAYER MAY BE DONE BY TWO APPROACHES. ACCORDING TO THE FIRST APPROACH, IT IS OBTAINED BY OXIDATION THROUGH SUBSTRATE 1 AND ACCORDING TO THE SECOND APPROACH BY IONIC IMPLANTATION OF OXYGEN IONS THROUGH THE MONOCRISTALLINE SILICON 2 LAYER, FOLLOWED BY A MONOCISTALLINE SILICON LAYER TREATMENT THROUGH THE SILICON MONOCISTALLINE TREATMENT 2 IS OXIDIZED BY IMPLANT OGYGEN IONS. THE FIRST APPROACH MAY BE USED ACCORDING TO THREE VARIANTS: THERMAL, ANODIC OR PLASMA OXIDATION OF THE SILICON-SUBSTRATE INTERFACE. THE PRESENT INVENTION APPLIES TO THE MANUFACTURE OF ALL SEMICONDUCTOR DEVICES OF THE SILICON TYPE ON INSULATING SUBSTRATE. |
| priorityDate |
1983-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |