| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b8db4179ff6219fd80775d812d321140 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03365
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0336 |
| filingDate |
1982-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03af04c5d32aa275c2bbee621d4234d7 |
| publicationDate |
1984-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
FR-2536913-A1 |
| titleOfInvention |
IMPROVEMENT TO POLYCRYSTALLINE-BASED PHOTOVOLTAIC CELLS BASED ON CDS |
| abstract |
THE INVENTION RELATES TO PHOTOVOLTAIC CELLS BASED ON POLYCRYSTALLINE CDS. A TYPICAL CDS-BASED CELL IS ESTABLISHED FROM THE CDS-CUS JUNCTION. THE INVENTION ON THIS TYPE OF CELL CONSISTS OF PLACING A LAYER OF A DIELECTRIC7 OXIDE OR ANALOGUE COMPOUND ON THE CUS5 LAYER, TO AVOID CONTACT OF THE CDS3 LAYER WITH THE ELECTRODE6 PLACED ON THIS DIELECTRIC7 LAYER. THE CELLS ACCORDING TO THE INVENTION PRESENT IN PARTICULAR A LOWER FAULT RATE. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4709119-A |
| priorityDate |
1982-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |