Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3803237c01675a891fd94223ffe2b5be |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-133512 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F2202-104 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78633 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5386 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136209 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1335 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1362 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-538 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
filingDate |
1983-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf7d53aeac471c093c7e4666c68df330 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5aa3b37cc8badb8eb0f4c050056e04e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6ae72f8afb3e9e02d68e8cd5d3f35ad |
publicationDate |
1984-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
FR-2532116-A1 |
titleOfInvention |
THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY DEVICE USING THE TRANSISTOR |
abstract |
A. THE INVENTION RELATES TO A LIQUID CRYSTAL DISPLAY DEVICE. B. THE BREAKDOWN VOLTAGE OF AN INSULATION LAYER FORMED BETWEEN SOURCE LINES AND GRID LINES IS GREATER THAN THE BREAKDOWN VOLTAGE OF A DUDIT TRANSISTOR GRID INSULATION, WHICH IS A THIN FILM TRANSISTOR. C. APPLICATION TO ACTIVE ELEMENT MATRIX-TYPE DISPLAY PANELS. |
priorityDate |
1982-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |