http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2527839-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d188ec23eddac02e70cfb65844dd4fd |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0772 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-07 |
| filingDate | 1982-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c20cc2a3c8b5fad344d634efb259b682 |
| publicationDate | 1983-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | FR-2527839-A1 |
| titleOfInvention | INTEGRATED SEMICONDUCTOR DEVICE WITH BIPOLAR STRUCTURE |
| abstract | INTEGRATED SEMICONDUCTOR DEVICE WITH BIPOLAR STRUCTURE COMPRISING TRANSISTORS MADE IN AN ACTIVE LAYER 4 COVERING A SUBSTRATE 1. DEVICE CHARACTERIZED IN THAT SUBSTRATE 1 IS HIGHLY DOPE IN IMPURITIES, AND IN THAT, BETWEEN SUBSTRATE 1 AND ACTIVE LAYER 4 , IS INCLUDED AN INTERMEDIATE LAYER 2 OF HIGH RESISTIVITY IN WHICH IS CREATED A DEEP ISLAND OF COLLECTOR 3. APPLICATION TO INTEGRATED CIRCUITS. |
| priorityDate | 1982-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.