http://rdf.ncbi.nlm.nih.gov/pubchem/patent/FR-2516549-A1

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filingDate 1981-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 1983-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber FR-2516549-A1
titleOfInvention SILICON SEMICONDUCTOR NICKELING METHOD AND METHOD FOR MANUFACTURING SOLAR CELLS COMPRISING THESE NICKEL SEMICONDUCTORS
abstract THE PROCESS DESCRIBED IN THE PRESENT INVENTION INCLUDES IMMERSION OF A SILICON SUBSTRATE IN A SUITABLE NICKEL BATH SO THAT THE NICKEL IONS IN THE BATH ARE TRANSFORMED TO SOLID NICKEL AND DEPOSITED ON THE SUBSTRATE TO FORM A LAYER ADHERENT THEREOF. . THIS PROCESS DOES NOT REQUIRE CATALYTIC PRE-TREATMENT OF THE SILICON SURFACE BEFORE RECEIVING THE NICKEL LAYER. USE OF THIS PROCESS FOR THE NICKELING OF DEVICES WITH THIN SILICON JUNCTIONS WITH A VIEW TO OBTAINING OHMIC CONTACTS.
priorityDate 1981-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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