| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a8d892d30ccc97439ae09fbffa7a145 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate |
1981-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d20563700cbd753499c41e30eddce484
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46475e2312feffa4edd9328476e9a1f9 |
| publicationDate |
1982-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
FR-2507013-A1 |
| titleOfInvention |
METHOD OF SEPARATION BETWEEN ELEMENTARY COMPONENTS IN AN INTEGRATED CIRCUIT AND APPLICATION TO A STRUCTURE OF CMOS TRANSISTORS |
| abstract |
THE PROCESS ACCORDING TO THE PRESENT INVENTION CONSISTS OF DIGGING A DEEP FURTHER THAN WIDE, WITH A WIDTH OF THE ORDER OF A MICRON, IN A SILICON LAYER. THERMAL OXIDATION IS THEN CONDUCTED TO FILL THIS FILL WITH SILICON OXIDE 3 DEVELOPED FROM THE WALLS OF THE FILL. DURING THE THERMAL OXIDATION STAGE, THE SILICON SURFACE AT NON-CROSSING LOCATIONS IS COVERED BY A MASKING LAYER 2 PROTECTING THIS SURFACE FROM OXIDATION. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-3534418-A1 |
| priorityDate |
1981-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |