| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0466 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
1978-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d8071c7db9cad0cf349b74dad6eac0d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83fa9d456608753c0b0e8e3d31dd26db |
| publicationDate |
1979-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
FR-2395604-A1 |
| titleOfInvention |
PROCESS FOR INJECTING ELECTRONS AND HOLES FROM AN INTERFACE OF THE MIS OR MIM TYPE UNDER THE EFFECT OF A MODERATE FIELD AND RESULTING STRUCTURE |
| abstract |
Method of injecting electrons and holes from an MIS or MIM type interface under the effect of a moderate field and resulting structure. The present invention relates to a gradual band gap structure for creating a charge storage device in which the injection of holes or electrons from a contact is possible without the need to compensate for the injection of electrons or holes from the other contact. It can be manufactured by depositing several layers of relatively thick thermal SiO 2, the layers of pyrolytic SiO 2 having increasing excess silicon content. The structure can also be fabricated by suitable ion implantation in the thermal SiO2 layer near the interface. Application to the manufacture of semiconductor devices and more particularly of charge storage memory elements. |
| priorityDate |
1977-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |