http://rdf.ncbi.nlm.nih.gov/pubchem/patent/ES-2887734-T3
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7923d2b6fc26a871563500dc6bc57359 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B2562-043 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B2562-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7781 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7783 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B2562-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B2562-028 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B5-6802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-112 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B5-117 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B5-0507 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/A61B5-0022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G16H40-67 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61B5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03F3-193 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-112 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61B5-117 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61B5-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61B5-1172 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/A61B5-145 |
| filingDate | 2018-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd5d1802f9cad8004bc768ae1a63a905 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e7022fdfa620731b93a427ea410b5fe |
| publicationDate | 2021-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | ES-2887734-T3 |
| titleOfInvention | Microelectronic sensor for biometric authentication |
| abstract | An open gate high electron mobility pseudo-conducting transistor for amplifying signals produced by a user's body in the sub-THz radiation range, comprising: (1) a multilayer hetero-junction structure made of single crystal semiconductor materials or polycrystalline gallium nitride (GaN) and aluminum gallium nitride (AlGaN), deposited on a substrate layer, wherein: (a) said structure comprises (i) an upper layer of GaN recessed in a gate area open transistor with a thickness of 5-9 nm and having a surface roughness of 0.2 nm or less, (ii) a GaN lower buffer layer, and (iii) an AlGaN barrier layer in the middle; said layers have Ga face polarity, thus forming a two-dimensional hole gas conducting channel (2DHG) in the upper GaN layer, near the interface with said AlGaN barrier layer; or (b) said structure comprises (i) an upper layer of GaN recessed in an open gate area of the transistor with a thickness of 5-9 nm and having a surface roughness of 0.2 nm or less, (ii) a lower GaN buffer layer, and (iii) an AlGaN barrier layer in between; said layers have N-face polarity, thus forming a two-dimensional conducting electron gas (2DEG) channel in the upper GaN layer, near the interface with said AlGaN barrier layer; or (c) said structure comprises (i) an upper layer of AlGaN recessed in an open gate area of the transistor with a thickness of 5-9 nm and having a surface roughness of 0.2 nm or less, and (ii) a lower GaN buffer layer; said layers have N-face polarity, thus forming a two-dimensional hole gas conducting channel (2DHG) in the GaN buffer layer, near the interface with said AlGaN barrier layer; (2) source and drain contacts connected to said conducting channel 2DEG or 2DHG and to electrical metallizations for connecting said transistor to an electrical circuit; and (3) a Vivaldi antenna electrode placed in the upper layer between said source and drain contact areas in an open gate area of the transistor and capable of detecting electrical signals in the sub-THz frequency range of 200-800 GHz . |
| priorityDate | 2017-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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