http://rdf.ncbi.nlm.nih.gov/pubchem/patent/ES-2878282-T3
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ade7832e0112f9a67db6901ae7db59f0 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-17 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-32 |
| filingDate | 2017-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_195d3f35af7c8b8d31e75163c6deccf2 |
| publicationDate | 2021-11-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | ES-2878282-T3 |
| titleOfInvention | Thin thermoelectric layer |
| abstract | A thermoelectric coating, the operation of which is based on the Seebeck effect, having a thermoelectric layer with semiconductor elements 'p' and 'n', where the semiconductor elements of the thermoelectric layer (1) are formed in semiconductor sublayers 'p' and ' n' which do not come into contact with each other, the thickness of which (d1) is in the range of 1 µm to 10 µm, where the sublayers are interconnected in series with the layered conductive elements (2a, 2b) provided with the ends of connection (4, 5) to evacuate the electrical energy generated, where the thermoelectric layer (1) is insulated on the conductive elements (2a, 2b) with the layers (3a, 3b) of electrical insulation that comprise inorganic oxides, and the thickness total coating is 50 μm or less, characterized in that a first layer is the electrical insulator layer with a homogeneous and continuous structure (3a), on which there is a first layer of the conductive element (2a) with the thickness (d2) within the interval d e 1 μm to 5 μm, on which alternate 'p', 'n' semiconductor sublayers of the thermoelectric layer (1) lie, where the width(s) of each 'p', 'n' semiconductor sublayer is(are) in the range from 0.1 mm to 2 mm, on which is a second layer of the conductive element (2b) with thickness (d2) within the range from 1 µm to 5 µm, on which is there is a second layer of the electrical insulating layer with a homogeneous and continuous structure (3b), said electrical insulating layers (3a, 3b) comprise MgO, said conducting element layers (2a, 2b) are made of copper. |
| priorityDate | 2016-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.