abstract |
A method for producing a crystalline form C of romidepsin comprising characteristic XRPD peaks at about 8.28, 11.45, 12.19 and 21.13 degrees 2θ, the method comprising serial seeding of saturated solution of form A of romidepsin with solids containing form C of romidepsin, wherein the serial seeding comprises at least three sequential seeding procedures. |