| abstract |
A polycrystalline electronic device, comprising; to. a flexible, metal or alloy substrate, annealed, with a primary or secondary recrystallization texture corresponding to {110} <100>, with a texture mosaic or sharpness of less than 10 degrees, which has an average grain size plus larger than 1 mm; b. at least one epitaxial layer of a polycrystalline semiconductor material at the top of a buffer layer, selected from a group comprising indirect prohibited band semiconductors, such as Si, Ge, GaP; direct band banned semiconductors such as CdTe, CuInGaSe2 (CIGS), GaAs, AlGaAs, GaInP and AlInP; multiband semiconductors such as II-O-VI materials such as Zn1-yMnyOxTe1-x and III-NV multiband semiconductors, such as GaNxAs1-x-yPy, and combinations thereof, optionally including minor doping agents of other materials in the semiconductor layers to obtain the required semiconducting properties of n-type or p-type; said polycrystalline semiconductor layer having a single texture {110} <100> or a texture {110} <100> rotated with a rotation angle of less than 90 °. |