http://rdf.ncbi.nlm.nih.gov/pubchem/patent/ES-2527795-T3
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b051f9f7933c758e66f6ceda5c9fb2cc |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1824 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 |
| filingDate | 2010-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e561b2eee49d7996604a0e2fdc929bfe http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b78ad421678e5e9b661551fb40379995 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9797b5471d337e85a6c41f8d9e10e7db http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a772046f35877b4c0cb2f2a83d5f022 |
| publicationDate | 2015-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | ES-2527795-T3 |
| titleOfInvention | Silane additives for silicon thin film photovoltaic devices |
| abstract | A method of depositing an amorphous silicon film (-Si: H) or a microcrystalline silicon film (-CSi: H) as a photoconductive film on a substrate, which uses silane; hydrogen; at least one additive chosen from: (a) higher order straight chain silanes, chosen from: disilane Si2H6, trisilane Si3H8, tetrasilane Si4H10, pentasilane Si5H12, hexasilane Si6H14, heptasilane Si7H16, octasilane Si8H18, nonasilane Si9H20, silanos, other straight chain of general formula SixH2x + 2 where x is from 2 to 20 and mixtures thereof; (b) higher order branched silanes, chosen from: 2-silyl-trisilane SiH3-Si (H) (SiH3) -SiH3, 2,2-disylyl15 trisilane SiH3-Si (SiH3) 2-SiH3, 2-silyl-tetrasilane SiH3-Si (H) (SiH3) -SiH2-SiH3, 2,3-disilyltetrasilane SiH3- SiH (SiH3) -SiH (SiH3) -SiH3, 2,2-disilyltetrasilane SiH3-Si (SiH3) 2-SiH2-SiH3, 3-silylpentasilane SiH3-SiH2- SiH (SiH3) -SiH2-SiH3, 2-silylpentasilane SiH3-SiH (SiH3) -SiH2-SiH2-SiH3, 2,3-disylylpentasilane SiH3- SiH (SiH3) -SiH (SiH2) -SiH -SiH3, 2,4-disylylpentasilane SiH3-SiH (SiH3) -SiH2-SiH (SiH3) -SiH3, 2-silylhexasilane SiH3-SiH (SiH3) - (SiH2) 3SiH3, 3-silylhexasilane SiH3-SiH2-SiH (SiH3) - (SiH2) 2SiH3, 2,2-disilylpentasilane SiH3-Si (SiH3) 2- (SiH2) 2-SiH3, 3,3-disylylpentasilane SiH3-SiH2-Si (SiH3) 2-SiH2 -SiH3, 2,2,3 -trisylyltetrasilane SiH3-Si (SiH3) 2-SiH (SiH3) -SiH3, 2-silylheptasilane SiH3-SiH (SiH3) - (SiH2) 4-SiH3, 3-silylheptasilane SiH3-SiH2-SiH (SiH3) - (SiH2) 3 ((SiH2) 3 -SiH3, 4-silylheptasilane SiH3- (SiH2) 2-SiH (SiH3) - (SiH2) 2-SiH3, 2,2-disylylhexasilane SiH3-Si (SiH3) 2- (SiH2) 3-SiH3, 2,3-disylyl hexasilane SiH3- SiH (SiH3) -SiH (SiH3) - (SiH2) 2-SiH3, 2,4-disylylhexasilane SiH3-SiH (SiH3) -SiH2-SiH (SiH3) -SiH2-SiH3, 2,5-disylylhexasilane SiH3- SiH (SiH3) - (SiH2) 2-SiH (SiH3) -SiH3, 3,3-disylylhexasilane SiH3-SiH2-Si (SiH3) 2- (SiH2) 2- SiH3, 3,4-disylylhexasilane SiH3-SiH2-SiH ( SiH3) -SiH (SiH3) -SiH2-SiH3, 2,2,3-trisylylpentasilane SiH3-Si (SiH3) 2- SiH (SiH3) -SiH2-SiH3, 2,2,4-trisylylpentasilane SiH3-Si (SiH3) 2 -SiH2-SiH (SiH3) -SiH3,2,3,3-trisylylpentasilane SiH3-SiH (SiH3) -Si (SiH3) 2-SiH2-SiH3, 2,3,4-trisylylpentasilane SiH3-SiH (SiH3) -SiH ( SiH3) -SiH (SiH3) -SiH3, 2,2,3,3-Tetrasylyltetrasilane SiH3-Si (SiH3) 2-Si (SiH3) 2-SiH3, other branched silanes of general formula SixH2x + 2, where x is an integer from 4 to 20 and mixtures thereof; (c) cyclic silanes, chosen from: cyclotrisilane Si3H6, cyclootetrasilane Si4H8, cyclopentasilane Si5H10, cyclohexasilane Si6H12, other cyclic silanes of the general formula SixH2x, where x is an integer of 3 to 20 and mixtures thereof; (d) cyclic silanes substituted with silyl groups, chosen from: silyl cyclootetrasilane SiH3-Si4H7, 1,2-disylyl 35 cyclopentasilane (SiH3) 2-Si5H8, silyl cyclohexasilane SiH3-Si6H11, 1,3-disylyl cyclohexasilane (SiH3) 2- Si6H10, other cyclo silanes substituted with silyl groups of the general formula SiyH3y-SixH2x-y where x is an integer from 3 to 20 and y is an integer from 1 to 2x and mixtures thereof; (e) silences substituted with silyl groups, chosen from: 2-tetrasylene SiH3-SiH> = SiH-SiH3, 2,3-disylyltetrasyl-2- ene SiH3-Si (SiH3)> = Si (SiH3) -SiH3, 2, 3-disililpentasil-2-ene SiH3-Si (SiH3)> = Si (SiH3) -SiH2-SiH3, 2,5- disililhexasil-2-eno SiH3-Si (SiH3)> = SiH-SiH2-SiH (SiH3) - SiH3, 2,3,4-trisylylhexasil-2-ene SiH3- Si (SiH3)> = Si (SiH3) -SiH (SiH3) -SiH2-SiH3, other silences substituted with silyl groups of general formula SiyH3y- SixH2x-y where x is an integer from 2 to 20 and y is an integer from 1 to 2x and mixtures thereof; and optionally at least one additional additive chosen from: (h) halogen substituted silanes, chosen from: SiH3Cl monochlorosilane, SiH2Cl2 dichlorosilane, SiHCl3 trichlorosilane, SiC3 tetrachlorosilane and SiH3-SiH2Cl chlorodisilane and mixtures thereof; (i) halogen-containing gases, chosen from: chlorine Cl2, hydrogen chloride HCl, chlorine trifluoride ClF3, nitrogen trifluoride NF3, fluorine F2, hydrogen fluoride HF, bromine Br2, hydrogen bromide HBr, hydrogen iodide HI and their mixtures; in which the silane used is in an amount of 5 to 10% (volume / volume), the additive (at least one) used is in an amount of 0.01 to 5% (v / v), the additive Additional (at least one), when used, is made in an amount of 0.01 to 5% (v / v) and the rest is hydrogen. |
| priorityDate | 2009-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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