http://rdf.ncbi.nlm.nih.gov/pubchem/patent/ES-2523790-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1b74695f4c6259a8598b722c1ef6eefa |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B28-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B28-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 |
| filingDate | 2013-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_832495e1cc8635e0a6db6bcd6fc5dba3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1d859df127be8ed1f449bba5c484afa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_92195eb17cd875f435156e97a64c9e8b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be2c0509f4553bc00ed0b3450ed5fb7a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4225c817d6ca743cc4752d2ba97b356 |
| publicationDate | 2015-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | ES-2523790-B1 |
| titleOfInvention | Procedure for obtaining silicon nanowires, in the absence of a gaseous silicon source, on different substrates |
| abstract | Procedure for obtaining silicon nanowires, in the absence of a gaseous silicon source, on different substrates. # The present invention provides a process for obtaining silicon nanowires, with homogeneous and controlled diameter and length, on various substrates, among which include those substrates other than silicon. It is a thermal process that uses as a catalyst a pure metal deposited in the form of a thin sheet, and where the surface of the substrate is adapted by using spheres of materials resistant to high temperatures or porous films. In the event that the substrate is different from silicon, a silicon support placed on the pure metal tank acts as a source of silicon during heat treatment allowing the growth of silicon nanowires. In addition, the present invention relates to the nanowires obtained by the aforementioned process and their uses. |
| priorityDate | 2013-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.