| abstract |
Chemical deposition process in atmospheric pressure gas phase (APCVD) to manufacture a thin layer of n-semiconductor metal sulphide on a substrate heated with a precursor containing the metal and hydrogen sulfide (H2S) as reactive gaseous precursor and a inert carrier gas stream, characterized in that, for the manufacture of a compact thin layer of indium sulphide (In2S3), an indium-containing precursor (PRIn (g / fl)), which it itself possesses, is transferred to a liquid or gaseous phase a high vapor pressure or forms a volatile adduct with a solvent, said precursor is mixed in a mixing region (MP) with the inert carrier gas stream (IG) and with the hydrogen sulphide (PRH2S (g)), which it is fed in an amount such that an absolute concentration of hydrogen sulphide (H2S) equal to or less than 1% by volume results, and said mixture is directed to the substrate (SU) heated to a temperature (T) with 100 ° C <=; T <= 275º C, choosing the concentration of In of the precursor containing indium (PRIn (g / fl)) so that the thin layer of indium sulphide (In2S3) to be manufactured is compact. |