http://rdf.ncbi.nlm.nih.gov/pubchem/patent/ES-2321165-T3
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_93d58c3fab3867279bd2c6afdfb5bf4b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-513 |
| filingDate | 2002-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e2e5a691e51635f8d86a95c32f96f5c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ee10f2ee62e83effeb8d9a67a219b03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c19a098beb7e62e3f368860b5c079f1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72845159b2eb260c99faec8cf23599a0 |
| publicationDate | 2009-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | ES-2321165-T3 |
| titleOfInvention | PROCESS AND DEVICE FOR DEPOSITING A LAYER OF CRYSTAL SILICON ON A SUBSTRATE. |
| abstract | Process for depositing a layer of at least substantially microcrystalline silicon in a substrate by means of a plasma, where said substrate is housed in a reaction chamber, where a plasma is generated in a plasma chamber that communicates through a passage opening with the chamber of reaction, and where said substrate is exposed to a source fluid for the deposition of silicon therein, source fluid that is introduced behind said passage opening directly into said reaction chamber, while maintaining a voltage drop between the reaction chamber and the plasma chamber, characterized in that the reaction chamber is located by means of a passage opening in open communication with another plasma chamber where another plasma arc is generated and an auxiliary fluid is injected into the minus a first of said plasma chamber and the other plasma chamber, the auxiliary fluid is capable of preferably embedding silicon atoms with In a non-crystalline bond, one or more fluids of a different composition are supplied to the other plasma chamber and because the substrate is simultaneously exposed to said source fluid and said auxiliary fluid to preferably embed silicon atoms with non-crystalline bond. |
| priorityDate | 2001-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.