| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_875c50ff6dcab7520189e6e0bae01704 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2304-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2009 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34333
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| filingDate |
2005-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8dc34135b6ecc49b39ce3c7a3010ea8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf07e5075f6280f195619cc1e22131e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_710693ef69d980c89c641c37e38340fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f50fd516493ac22f19a13d1e0e78a77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fd2857b3a7867e4c317069c7e548d23
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68c123966891b6ae113ecef2b273710e |
| publicationDate |
2009-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
ES-2317279-T3 |
| titleOfInvention |
LASER DIODE BASED ON NITRIDE AND METHOD OF MANUFACTURE OF A LASER DIODE BASED ON NITRIDE. |
| abstract |
Nitride-based laser diode, comprising a crystalline substrate (1) on which a set of layers of type n, an optically active set of layers (5) and a set of layers of type p are grown in sequence, while that said set of layers of type n comprises at least one layer (2) buffer, a coating layer (3) of lower n-type and a waveguide layer (4) of lower n-type and while said set of layers of type p It comprises at least one upper p-waveguide layer (6) containing an electron-blocking layer, an upper p-type coating layer (7) and a p-type contact layer (8), characterized in that said layer of electron blocking comprises an alloy doped with magnesium InxAlyGa1-x-yN in which 1> = x> 0.001 and 1 = y = 0 and the concentration of hydrogen in said electron blocking layer is less than 5 x 10 17 cm - 3 . |
| priorityDate |
2004-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |