http://rdf.ncbi.nlm.nih.gov/pubchem/patent/ES-2312575-T3
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_42a5dd90f3ff606095095e9b507311f8 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0322 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0296 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-10 |
| filingDate | 2002-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b82075d98eff4eb913877c9166d8ba8c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96e83c9dac4202267e44d5ab5d57bba8 |
| publicationDate | 2009-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | ES-2312575-T3 |
| titleOfInvention | PROCEDURE FOR THE PRODUCTION OF A LAYER OF SEMICONDUCTORS OF CALCOGENURO OF TYPE ABC2 WITH OPTICAL CONTROL OF THE PROCESS. |
| abstract | Procedure for the production of a chalcogenide semiconductor layer of type ABC 2 with optical process control, in which during production the resulting layer is irradiated with light, the reflected light is detected and the recorded light signal is associated according to the time at points characteristic of the production of the layer, characterized in that the chalcogenide semiconductor layer is produced, by first applying consecutively the two metal precursor layers formed by the elements A and B and then a chalcogenurization process is performed With simultaneous optical control of the process, in which the sequence of layers AB is irradiated with light from at least one coherent light source, the diffused scattered light on the surface is detected and the scattered light signal measured as a function of time is evaluated , such that - to a point I, the transformation of the precursor of compound AB 2 to A 11B 9 is associated, - to a point II, l is associated At chacogenurization of the surface of the resulting layer, so that phase ABC2 is initially formed, - to a point III, the complete formation of ABC 2 is associated in the case of a precursor layer without an excess of A or of the Complete phase separation of ABC2 and the AxCy phase in the case of a precursor layer with an excess of A, and - to a point IV, the transformation of the external phase A xC and the external phase AC is associated. |
| priorityDate | 2001-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.