| abstract |
Method of depositing a layer of transparent semiconductor oxide (12) on a substrate (10) disposed inside an enclosure (26), characterized in that it consists of: - having sources (32, 34, 36) containing respectively a compound oxygen-based liquid, a liquid metal compound intended to form the oxide, and a dopant in gaseous or liquid form, - in establishing in said enclosure a temperature between 130 and 300 ° C and a pressure between 0.01 to 2 millibars , and then - putting said sources in communication with said enclosure, which has the effect of vaporizing said liquids on their surface, aspirating them into the enclosure without having to use a carrier gas, and causing them to react there with the dopant so that it is formed on the substrate said oxide layer. |