| abstract |
Magnetoelectric device sensitive to an applied magnetic field, comprising first and second ferromagnetic regions (3, 4) with a channel region (5) between them, the ferromagnetic regions (3, 4) being configured so that load carriers with a particular spin polarization, which can pass through the first (3) ferromagnetic region, can pass through the second ferromagnetic region (4) as a function of the relative magnetization orientations of the ferromagnetic regions produced by the applied magnetic field, according to which the device it exhibits a conductivity as a function of the intensity of the applied field, characterized in that the channel region (5) is configured to provide a quasi-one-dimensional channel to make the charge carriers that cross the first ferromagnetic region maintain their spin polarization when passing towards The second ferromagnetic region. |