Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d4ada69388e0a1b68daaf536597c732 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02208 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1279 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B41-5035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1275 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D7-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B41-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D3-02 |
filingDate |
1992-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2002-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e09aeb8b94a697e9490bfa86b00a6e9c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fca9225e5694b87a17e64a3b1c01ed1f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a130f4bd1213a918abdfd72d861475ab |
publicationDate |
2002-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
ES-2176184-T3 |
titleOfInvention |
PROCEDURE FOR SILVER SUBSTRATE COATING. |
abstract |
THE PRESENT INVENTION REFERS TO A METHOD FOR THE FORMATION OF A SILICON COATING IN A SUBSTRATE. THE METHOD IS TO COVER A SUBSTRATE WITH A SILICON PRECURSOR THAT HAS A FUSION POINT BETWEEN 50 AND 450 (GRADES) C APPROXIMATELY. THE COATING IS WARMED AT A TEMPERATURE HIGHER THAN YOUR FUSION POINT IN AN INERT ENVIRONMENT TO ALLOW THE COATING TO BE CASED AND FLOWS. THE FOUNDED COATING IS WARMED THEN IN AN ENVIRONMENT THAT FACILITATES THE SILVIC CONVERSION DURING A SUFFICIENT TIME TO BECOME SILICE. |
priorityDate |
1991-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |