http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-4044251-A1

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filingDate 2022-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8e15a95b876f73da2039a4e0b9f9256
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publicationDate 2022-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-4044251-A1
titleOfInvention Transistor
abstract The present description relates to a device (300) comprising a first transistor (302), a gate region (110G) of which partially penetrates a layer (104) of gallium nitride, and a second transistor (304) located inside of the gate region of the first transistor.
priorityDate 2021-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 34.