http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3993065-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_886dfcf0b3ab1758e73a852ff99ef913 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03685 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-546 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02363 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03682 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1864 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-078 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352 |
| filingDate | 2021-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb7e191325dd56c9600a0ee56eeb0822 |
| publicationDate | 2022-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-3993065-A1 |
| titleOfInvention | Method of manufacturing tandem photovoltaic cells and tandem photovoltaic cell produced by this method |
| abstract | The subject of the invention is a method of manufacturing µ-tandem photovoltaic cells and a µ-tandem photovoltaic cell manufactured by this method, which is characterized in that it is carried out in five successive steps, consisting of: n- in the first step, the upper surface of the silicon lamellar substrate (1) with its folded texture, made of silicon microcrystals (Si) with the grain size of mulliticrystalline silicon <1 µm with its lower surface metallized (2) - an electrode, is evenly applied by spray coating or by the rollblade method with colloidal material (3) with a thickness of 6 nm - 80 nm in the form of dispersed quantum dots with a concentration of 5 mg/ml - 50 mg/ml, with a spheroidal or rhodoid architecture, built on the basis of elements from groups II - VI, in surrounded by an electric field "E" with an intensity of 0.5 V/m - 4.5 V/m perpendicularly situated its lines (4) to the surface of the silicon substrate (1) and with an absorption range ranging from 320 nm -1800 nm, and then n- in the second step, the lamellar silicon substrate (1) with a layer of colloidal material (3) on it is placed in a thermal chamber and subjected to a heat treatment process for 5 minutes - 25 minutes at a temperature of 70°C - 90°C with a profile temperature of 10°C/min and in the atmosphere of intertidal gas and the material dispersing quantum dots contained in the colloidal material (3) is evaporated, then the obtained intermediate is removed from this chamber and allowed to cool to room temperature (21°C), and then n- in the third step, the cooled semi-finished product of this photovoltaic cell is rinsed with flowing inert gas at a pressure of 0.6 bar - 1 bar with a purity of 99.99%, obtaining a passivation layer (5) with a thickness of 5 nm - 8 nm, and then n- in the fourth step, the semi-finished product of this cell is subjected to the process of covering it with a protective layer (6) with aluminium oxide (Al 2 O 3 ) with a thickness of 100 nm - 380 nm, using the magnetron method at room temperature. |
| priorityDate | 2020-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.