| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_98a75c9fff239084cf3c988c59841957 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30617
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2020-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e422e911766749fa20099c2c762c4a78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1653ef162875327100acfa18a823fc50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7067760fcdd12d949e5521826a7d3b07 |
| publicationDate |
2022-03-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-3959291-A1 |
| titleOfInvention |
Etching solution and method for aluminum nitride |
| abstract |
Described herein are etching solutions and method of using the etching solutions suitable for etching aluminum nitride (AlN) from a semiconductor substrate during the manufacture of a semiconductor device comprising AlN and silicon material without harming the silicon material. The etching solution comprises a cationic surfactant, water, a base, and a water-miscible organic solvent. |
| priorityDate |
2019-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |