| abstract |
Devices and methods that a first gate structure wrapping around a channel layer (208 on the left) disposed over the substrate (202), a second gate structure wrapping around another channel layer (208 on the right) disposed over the substrate and a dielectric fin (1004) structure formed over a shallow trench isolation (402) feature and between the first and second gate structures. At least one metallization layer (2602, 2604) is formed on the first gate structure, the dielectric fin structure, and the second gate structure and contiguously extends from the first gate structure to the second gate structure. The contiguous metallization layer (2602, 2604) connects the two gate structures of the left and on the two gate structures on the right, but is discontinuous at the middle dielectric fin (1004, 2402). |