| abstract |
A wafer manufacturing method, an epitaxial wafer manufacturing method, and a wafer 10 and epitaxial wafer 20 manufactured thereby, are provided. The wafer manufacturing method enables the manufacture of a wafer 10 with a low density of micropipe defects and minimum numbers of particles and scratches. The epitaxial wafer 20 manufacturing method enables the manufacture of an epitaxial wafer 20 that has low densities of defects such as downfall, triangular, and carrot defects, exhibits excellent device characteristics, and improves the yield of devices. |